Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor
نویسندگان
چکیده
منابع مشابه
Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor
Voltage-tunable plasmon resonances in the two-dimensional electron gas 2DEG of a high electron mobility transistor HEMT fabricated from the InGaAs/InP materials system are reported. The device was fabricated from a commercial HEMT wafer by depositing source and drain contacts using standard photolithography and a semitransparent gate contact that consisted of a 0.5 m period transmission grating...
متن کاملInvestigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor
The observation of THz regime transmission resonances in an InGaAs/InP high electron mobility transistor (HEMT) can be attributed to excitation of plasmons in its two-dimensional electron gas (2DEG). Properties of grating-based, gatevoltage tunable resonances are shown to be adequately modeled using commercial finite element method (FEM) software when the HEMT layer structure, gate geometry and...
متن کاملSpin dynamics in high-mobility two-dimensional electron systems
Understanding the spin dynamics in semiconductor heterostructures is highly important for future semiconductor spintronic devices. In high-mobility two-dimensional electron systems (2DES), the spin lifetime strongly depends on the initial degree of spin polarization due to the electron-electron interaction. The Hartree-Fock (HF) term of the Coulomb interaction acts like an effective out-ofplane...
متن کاملTunable graphene single electron transistor.
We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by three lateral graphene gates and an additional back gate. The tunneling coupling is a strongly nonmonotonic function of gate voltage indicating the presence...
متن کاملMagnetization measurements of high-mobility two-dimensional electron gases
M. Zhu, A. Usher, A. J. Matthews, A. Potts,* M. Elliott, W. G. Herrenden-Harker, D. A. Ritchie, and M. Y. Simmons School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom Department of Physics and Astronomy, Cardiff University, 5 The Parade, Cardiff CF24 3YB, United Kingdom Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, United Kingdom ~Received 22 April 20...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2009
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3129319