Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

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Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

Voltage-tunable plasmon resonances in the two-dimensional electron gas 2DEG of a high electron mobility transistor HEMT fabricated from the InGaAs/InP materials system are reported. The device was fabricated from a commercial HEMT wafer by depositing source and drain contacts using standard photolithography and a semitransparent gate contact that consisted of a 0.5 m period transmission grating...

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ژورنال

عنوان ژورنال: Journal of Applied Physics

سال: 2009

ISSN: 0021-8979,1089-7550

DOI: 10.1063/1.3129319